| Issue |
Europhys. Lett.
Volume 42, Number 1, April 1998
|
|
|---|---|---|
| Page(s) | 67 - 72 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1998-00553-2 | |
| Published online | 01 September 2002 | |
Metal-insulator transition in the persistent
photoconductor 
1
Department of Physics,
Science Laboratories, University of
Durham, South Road, Durham, DH1 3LE, UK
2
Department of Materials Science and Engineering
Massachusetts Institute of Technology, Cambridge,
Massachusetts 02139, USA
Received:
25
November
1997
Accepted:
5
February
1998
Persistent photoconductivity has been used to probe the metal-insulator
transition in the diluted magnetic semiconductor 
. We have measured the d.c. conductivity of 
with tunable photogenerated carrier concentration,
from the insulating phase up to 
in the same sample. In the
insulating phase, Efros-Shklovskii variable range hopping conduction is
observed. In the metallic phase the temperature dependence of the conductivity
is adequately described by quantum corrections to the zero-temperature
conductivity due to the effects of electron-electron interaction and weak
localization. In the critical region the scaling theory of electron
localization has been applied. We observe a critical carrier concentration
, and a critical conductivity exponent
close to one.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 72.40.+w – Photoconduction and photovoltaic effects / 75.50.Pp – Magnetic semiconductors
© EDP Sciences, 1998
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