Volume 42, Number 1, April 1998
|Page(s)||67 - 72|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Metal-insulator transition in the persistent photoconductor
Department of Physics,
Science Laboratories, University of
Durham, South Road, Durham, DH1 3LE, UK
2 Department of Materials Science and Engineering Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Accepted: 5 February 1998
Persistent photoconductivity has been used to probe the metal-insulator transition in the diluted magnetic semiconductor . We have measured the d.c. conductivity of with tunable photogenerated carrier concentration, from the insulating phase up to in the same sample. In the insulating phase, Efros-Shklovskii variable range hopping conduction is observed. In the metallic phase the temperature dependence of the conductivity is adequately described by quantum corrections to the zero-temperature conductivity due to the effects of electron-electron interaction and weak localization. In the critical region the scaling theory of electron localization has been applied. We observe a critical carrier concentration , and a critical conductivity exponent close to one.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 72.40.+w – Photoconduction and photovoltaic effects / 75.50.Pp – Magnetic semiconductors
© EDP Sciences, 1998
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