Issue |
Europhys. Lett.
Volume 43, Number 5, September I 1998
|
|
---|---|---|
Page(s) | 565 - 571 | |
Section | Condensed matter: structure, thermal and mechanical properties | |
DOI | https://doi.org/10.1209/epl/i1998-00398-1 | |
Published online | 01 September 2002 |
Pulsed laser deposition of crystalline silicon carbide films
Dipartimento di Fisica, Università di Catania, Istituto Nazionale per la Fisica della Materia, Corso Italia 57, I95129 Catania, Italy
Received:
13
January
1998
Accepted:
14
July
1998
Silicon carbide films were deposited on top of silicon substrates maintained at
various temperatures using the technique of Pulsed Laser Deposition (PLD) employing
an excimer or a ruby laser. We found the deposited films to be crystalline for substrate
temperature of only for XeCl deposition and
for ruby. Films
deposited at room temperature are amorphous and, as in the case of amorphous films obtained by
high fluence ion implantation, require an annealing at a temperature as high as
to crystallise. We demonstrated, by means of ablation rate measurements, that the kinetic energy of the
atoms ejected from the laser irradiated target plays a crucial role in the observed lowering of
crystallisation temperature.
PACS: 68.55.-a – Thin film structure and morphology / 81.15.Fg – Laser deposition
© EDP Sciences, 1998
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