Volume 43, Number 5, September I 1998
|Page(s)||565 - 571|
|Section||Condensed matter: structure, thermal and mechanical properties|
|Published online||01 September 2002|
Pulsed laser deposition of crystalline silicon carbide films
Dipartimento di Fisica, Università di Catania, Istituto Nazionale per la Fisica della Materia, Corso Italia 57, I95129 Catania, Italy
Accepted: 14 July 1998
Silicon carbide films were deposited on top of silicon substrates maintained at various temperatures using the technique of Pulsed Laser Deposition (PLD) employing an excimer or a ruby laser. We found the deposited films to be crystalline for substrate temperature of only for XeCl deposition and for ruby. Films deposited at room temperature are amorphous and, as in the case of amorphous films obtained by high fluence ion implantation, require an annealing at a temperature as high as to crystallise. We demonstrated, by means of ablation rate measurements, that the kinetic energy of the atoms ejected from the laser irradiated target plays a crucial role in the observed lowering of crystallisation temperature.
PACS: 68.55.-a – Thin film structure and morphology / 81.15.Fg – Laser deposition
© EDP Sciences, 1998
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