| Issue |
Europhys. Lett.
Volume 43, Number 6, September II 1998
|
|
|---|---|---|
| Page(s) | 695 - 700 | |
| Section | Condensed matter: structure, thermal and mechanical properties | |
| DOI | https://doi.org/10.1209/epl/i1998-00419-1 | |
| Published online | 01 September 2002 | |
Structural and binding properties of vacancy clusters in silicon
1
Istituto Nazionale per la Fisica della Materia, Dipartimento di Scienza dei Materiali, Università degli Studi di Milano, via Emanueli 15, I-20126 Milano, Italy
2
Lawrence Livermore National Laboratory - Livermore, CA 94550, USA
Received:
3
June
1998
Accepted:
23
July
1998
By means of large-scale quantum simulations we
investigate the formation and binding of vacancy clusters Vn in silicon
for 
. We show that different growth patterns exist and that an interplay
between energy and topology arguments determines the most stable aggregates.
PACS: 61.72.Qq – Microscopic defects (voids, inclusions, etc.) / 61.80.Az – Theory and models of radiation effects / 82.20.Wt – Computational modeling; simulation
© EDP Sciences, 1998
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