Volume 44, Number 1, October I 1998
|Page(s)||85 - 90|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Effects of spin accumulation on single-electron tunneling in a double ferromagnetic microjunction
Unité Mixte de Physique CNRS/Thomson - Domaine de Corbeville, 91404 Orsay, France
Accepted: 12 August 1998
Electron tunneling in a double microjunction, in which one electrode is non magnetic while the second electrode and metallic island are ferromagnetic, is analysed theoretically in the Coulomb blockade regime. The limit of fast intrinsic spin relaxation on the island (no spin accumulation) is compared with the limit of slow spin relaxation (maximum spin accumulation). It is shown that spin accumulation leads to a strong dependence of the Coulomb "staircase” on the magnetic configuration of the junction and, consequently, to a number of new effects.
PACS: 73.40.Gk – Tunneling / 73.40.Rw – Metal–insulator–metal structures / 75.70.-i – Magnetic films and multilayers
© EDP Sciences, 1998
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