Issue |
Europhys. Lett.
Volume 44, Number 5, December I 1998
|
|
---|---|---|
Page(s) | 627 - 633 | |
Section | Condensed matter: structure, thermal and mechanical properties | |
DOI | https://doi.org/10.1209/epl/i1998-00518-y | |
Published online | 01 September 2002 |
Low-temperature deposition of cubic boron nitride thin films
1
Dipartimento di Ingegneria Nucleare, Politecnico di Milano - I-20133 Milano,
Italy
2
Istituto Nazionale per la Fisica della Materia (INFM ) and Dipartimento
di Fisica Università di Trento - I-38050 Povo (TN ) Italy
3
Istituto Nazionale per la Fisica della Materia (INFM ) and Dipartimento
di Ingegneria Nucleare, Politecnico di Milano - I-20133 Milano, Italy
Received:
21
July
1998
Accepted:
15
October
1998
BN thin films have been deposited on (100)-oriented Si wafers by radio
frequency (RF) magnetron sputtering using r.f. target power in the range and substrate bias voltage in the
range, while maintaining
a low substrate temperature (
). Film characterization has been performed
by using Fourier Transform Infrared Spectroscopy (FTIR), Micro-Raman Spectroscopy,
X-ray Diffraction (XRD) and nanoindentation measurements. With appropriate
choice of the bias voltage BN films with predominant cubic phase (90 at. %) can be obtained. The deposited
layers are nearly stoichiometric (the B/N atomic composition ratio is
) and present a considerable
nanohardness value (
); structural analysis shows grain size in the nanometric range,
thus giving rise to strong phonon confinement effects.
PACS: 64.70.Kb – Solid-solid transitions / 68.55.Jk – Structure and morphology; thickness / 81.15.Cd – Deposition by sputtering
© EDP Sciences, 1998
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