Volume 45, Number 2, January 1999
|Page(s)||222 - 227|
|Section||Condensed matter: structure, thermal and mechanical properties|
|Published online||01 September 2002|
Interdependence of strain and shape in self-assembled coherent InAs islands on GaAs
Sektion Physik, Ludwig-Maximilians-Universität München D-80539 München,
2 Materials Department, University of California Santa Barbara, CA 93106, USA
Accepted: 16 November 1998
Self-assembled coherent InAs islands on GaAs (100) have been investigated by a novel version of grazing-incidence diffraction ("iso-strain scattering”). This method permits the determination of the interdependence of strain and shape, as well as the relaxation gradient within the InAs dots. The relaxation in the islands ranges from fully strained at the bottom to completely relaxed at the top of the islands. The radius of the dots at a given height depends linearly on the local elastic lattice relaxation, with a rapidly increasing relaxation gradient when approaching the top of the islands.
PACS: 68.65.+g – Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties / 68.55.Jk – Structure and morphology; thickness / 61.10.-i – X-ray diffraction and scattering
© EDP Sciences, 1999
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.