Volume 45, Number 2, January 1999
|Page(s)||249 - 255|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Coulomb charging effects for finite channel number
Fakultät für Physik, Albert-Ludwigs-Universität
Hermann-Herder-Straße 3, D–79104 Freiburg, Germany
2 Service de Physique de l'Etat Condensé - CEA-Saclay, 91191 Gif-sur-Yvette, France
3 Centrum für Complexe Systeme und Visualisierung Universitätsallee 29, D-28359 Bremen, Germany
Accepted: 18 November 1998
We consider quantum fluctuations of the charge on a small metallic grain caused by virtual electron tunneling to a nearby electrode. The average electron number and the effective charging energy are determined by means of perturbation theory in the tunneling Hamiltonian. In particular, we discuss the dependence of charging effects on the number N of tunneling channels. Earlier results for are found to be approached rather rapidly with increasing N.
PACS: 73.23.Hk – Coulomb blockade; single-electron tunneling / 73.40.Gk – Tunneling / 73.40.Rw – Metal-insulator-metal structures
© EDP Sciences, 1999
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