Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy

K. Ketata; M. Ketata; S. Koumetz; J. Marcon

doi:10.1209/epl/i1999-00170-7

All issues

Volume 45 / No 3 (February 1999)

Europhys. Lett., 45 3 (1999) 348-353

Abstract

Issue		Europhys. Lett. Volume 45, Number 3, February 1999


Page(s)		348 - 353
Section		Condensed matter: structure, mechanical and thermal properties
DOI		https://doi.org/10.1209/epl/i1999-00170-7
Published online		01 September 2002

Europhys. Lett., 45 (3), pp. 348-353 (1999)

Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy

K. Ketata, M. Ketata, S. Koumetz and J. Marcon

LEMI UPRES - EA. 2654 - IUT Université de Rouen rue Lavoisier, 76821 Mont Saint Aignan, France

Received: 6 July 1998
Accepted: 25 November 1998

Abstract

The redistribution of the p-type dopant Be during the post-growth rapid thermal annealing in InGaAs layers grown by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry technique. The experimental structures consisted of a 2000 Å Be-doped ( $3\times 10^{19}\,{\rm cm^{-3}}$ ) $\rm In_{0.53}Ga_{0.47}As$ layer sandwiched between 5000 Åundoped $\rm In_{0.53}Ga_{0.47}As$ layers. To explain the observed depth profiles, obtained for annealing cycles with time durations of 10 to 240 s and temperatures in the range of 700- $\rm 900 {}^\circ C$ , two models of kick-out mechanism, with neutral and singly positively ionized Be interstitial species, have been considered.

PACS: 66.30.Jt – Diffusion of impurities / 71.55.Eq – III-V semiconductors / 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy

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