Volume 45, Number 3, February 1999
|Page(s)||368 - 373|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
The level-shifting–induced negative magnetoresistance in the nearest-neighbor hopping conduction
Department of Physics, The Hong Kong University of Science
and Technology Clear Water Bay, Hong Kong
2 Department of Physics, Oklahoma State University - Stillwater, OK 74078, USA
Accepted: 26 November 1998
We propose a new mechanism of negative magnetoresistance in non-magnetic granular materials in which electron transport is dominated by hopping between two nearest-neighbor clusters. We study the dependence of magnetoresistance on temperature and separation between neighboring clusters. At a small separation we find a negative magnetoresistance at low temperatures and it changes over to a positive value as temperature increases. For a fixed temperature, magnetoresistance changes from negative to positive when the cluster separation increases. The change of magnetoresistance can be more than 80 % at low temperatures.
PACS: 72.80.Tm – Composite materials / 75.70.Pa – Giant magnetoresistance / 81.05.Rm – Porous materials; granular materials
© EDP Sciences, 1999
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