| Issue |
Europhys. Lett.
Volume 45, Number 3, February 1999
|
|
|---|---|---|
| Page(s) | 368 - 373 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1999-00173-x | |
| Published online | 01 September 2002 | |
The level-shifting–induced negative magnetoresistance in the nearest-neighbor hopping conduction
1
Department of Physics, The Hong Kong University of Science
and Technology Clear Water Bay, Hong Kong
2
Department of Physics, Oklahoma State University - Stillwater, OK 74078, USA
Received:
21
July
1998
Accepted:
26
November
1998
We propose a new mechanism of negative magnetoresistance in
non-magnetic granular materials in which electron transport is
dominated by hopping between two nearest-neighbor clusters.
We study the dependence of magnetoresistance on
temperature and separation between neighboring clusters.
At a small separation we find a negative magnetoresistance at low
temperatures and it changes over to a positive value as
temperature increases. For a fixed temperature, magnetoresistance changes
from negative to positive when the cluster separation increases.
The change of magnetoresistance 
can be more than 80 %
at low temperatures.
PACS: 72.80.Tm – Composite materials / 75.70.Pa – Giant magnetoresistance / 81.05.Rm – Porous materials; granular materials
© EDP Sciences, 1999
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