| Issue |
Europhys. Lett.
Volume 45, Number 5, March I 1999
|
|
|---|---|---|
| Page(s) | 579 - 584 | |
| Section | Condensed matter: structure, mechanical and thermal properties | |
| DOI | https://doi.org/10.1209/epl/i1999-00206-0 | |
| Published online | 01 September 2002 | |
Low-temperature scanning tunneling spectroscopy as a probe for a confined electron gas
4.Physikalisches Institut - Bunsenstraße 13, D-37073
Göttingen, Germany
Received:
6
August
1998
Accepted:
22
December
1998
In situ cleaved (110) surfaces of n-doped GaAs have been investigated by
scanning tunneling microscopy (STM) and spectroscopy (STS) at temperatures
from 8 K to 300 K. At low temperatures oscillatory features in the
topography around individual donor atoms embedded in the GaAs matrix and
peaks in the differential conductivity 
curves are seen. Both vanish
with increasing temperature. The experimental results are described consistently
in the framework of quantized subbands of a low-dimensional electron gas
within the band-bending region which is induced by the STM tip. The quantization
occurs at unpinned semiconductors surfaces and is also relevant for a quantitative
understanding of STM data at room temperature.
PACS: 61.16.Ch – Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc / 73.20.Dx – Electron states in low-dimensional structures (superlattices, quantum well structures and multilayers) / 71.55.Eq – III-V semiconductors
© EDP Sciences, 1999
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