| Issue |
Europhys. Lett.
Volume 46, Number 1, April I 1999
|
|
|---|---|---|
| Page(s) | 56 - 61 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1999-00562-1 | |
| Published online | 01 September 2002 | |
On the optimization of the large
magnetoresistance of 
Department of Physics, Faculty of Science, University of Zagreb
Bijenička 32, HR-10000 Zagreb, Croatia
Received:
6
November
1998
Accepted:
22
January
1999
We describe an attempt to find the key parameter for the optimization of
recently discovered large magnetoresistance in non-stoichiometric silver
chalcogenides. Our measurements of the resistivity, magnetoresistance and the
Hall effect of Ag2Se and their simple analysis lead us to the conclusion that
the most important optimization variable is the Hall mobility of the charge
carriers. We suggest that the largest magnetoresistance may be expected in the
samples with the Hall mobility equal to about 
m2/Vs.
PACS: 72.20.My – Galvanomagnetic and other magnetotransport effects / 72.80.Jc – Other crystalline inorganic semiconductors
© EDP Sciences, 1999
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