Volume 46, Number 1, April I 1999
|Page(s)||56 - 61|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
On the optimization of the large magnetoresistance of
Department of Physics, Faculty of Science, University of Zagreb
Bijenička 32, HR-10000 Zagreb, Croatia
Accepted: 22 January 1999
We describe an attempt to find the key parameter for the optimization of recently discovered large magnetoresistance in non-stoichiometric silver chalcogenides. Our measurements of the resistivity, magnetoresistance and the Hall effect of Ag2Se and their simple analysis lead us to the conclusion that the most important optimization variable is the Hall mobility of the charge carriers. We suggest that the largest magnetoresistance may be expected in the samples with the Hall mobility equal to about m2/Vs.
PACS: 72.20.My – Galvanomagnetic and other magnetotransport effects / 72.80.Jc – Other crystalline inorganic semiconductors
© EDP Sciences, 1999
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