Volume 46, Number 5, June I 1999
|Page(s)||589 - 594|
|Section||Atomic and molecular physics|
|Published online||01 September 2002|
How to use oxygen and atomic hydrogen to prepare atomically flat fcc Co(110) films
Institut für Grenzflächenforschung und Vakuumphysik
Forschungszentrum Jülich - D-52425 Jülich, Germany
2 Institut für Physikalische und Theoretische Chemie Wegelerstr. 12, D-53113 Bonn, Germany
3 Institut für Experimentalphysik, Johannes-Kepler-Universität Linz , Austria
Accepted: 30 March 1999
It is shown that atomic hydrogen from a specially designed atomic beam source is well suited for removing chemisorbed oxygen from an fcc Co(110) film that has been grown on a Cu(110) substrate using oxygen as a surfactant. Exposing the oxygen-terminated Co surface to atomic hydrogen leads to a surface reaction which destroys the (3×1) ordered-O induced surface reconstruction of the Co film. Upon annealing at 380 K, the hydrogen remaining on the O-free Co surface can be completely desorbed. With this technique, it is possible for the first time to prepare about 15 monolayers thick, atomically-flat fcc Co(110) films.
PACS: 34.50.-s – Scattering of atoms, molecules, and ions / 68.35.Bs – Surface structure and topography / 82.40.Dm – Atomic and molecular beam reactions
© EDP Sciences, 1999
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