Volume 46, Number 6, June II 1999
|Page(s)||808 - 814|
|Section||Condensed matter: electronic structure, electrical, magneticand optical properties|
|Published online||01 September 2002|
Effect of interfacial scattering on the magnetoresistance of magnetic tunnel junctions
CEA, Département de Recherche Fondamentale sur la
Matière Condensée SP2M/NM - 38054
Grenoble Cedex 9, France
2 Department of Physics, Moscow Lomonosov University Moscow 119699, Russian Federation
3 MESA Research Institute, University of Twente P.O.Box 217, 7500 AE Enschede, Netherlands
Accepted: 9 April 1999
In theories of electron tunneling between metallic layers, one fundamental question remains: which is the relevant density of states which determines the tunnel current through the barrier? In this letter, the influence of electron scattering at the metal/oxide interface in magnetic tunnel junctions on the tunnel current is addressed from a theoretical point of view. Two contributions to the tunnel current and to the magnetoresistance of these junctions are obtained: one from specular transmission through the barrier which is related to the one-dimensional density of states next to the metal/oxide interface, the other from tunneling assisted by interfacial scattering which depends both on the one-dimensional and three-dimensional density of states. The effect of spin-flip scattering on the impurities is discussed as well.
PACS: 75.70.-i – Magnetic films and multilayers / 73.50.Jt – Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) / 85.30.Mn – Junction breakdown and tunneling devices (including resonance tunneling devices)
© EDP Sciences, 1999
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