| Issue |
Europhys. Lett.
Volume 47, Number 1, July 1999
|
|
|---|---|---|
| Page(s) | 110 - 115 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1999-00359-2 | |
| Published online | 01 September 2002 | |
Doping-induced enhancement of the critical currents of
grain boundaries in 
Experimentalphysik VI, Center for Electronic Correlations and Magnetism Institute of Physics, Augsburg University - 86135 Augsburg, Germany
Received:
23
December
1998
Accepted:
19
April
1999
The critical current density of grain boundaries in
films is increased beyond the hitherto established limit
by overdoping the superconductor. Using Ca-doping, values for the critical current density
are obtained, that exceed the highest values reported
ever for the undoped material by more than a factor
of seven. Further, it is found that the overdoping strongly reduces
the grain boundary normal-state resistivity.
This systematic improvement of the grain boundary
transport properties by doping is of great importance for
applications of the high-Tc cuprates and gives insight into
the mechanisms controlling the grain boundary behavior.
PACS: 74.72.-h – High-Tc compounds / 74.60.Jg – Critical currents / 74.62.Dh – Effects of crystal defects, doping and substitution
© EDP Sciences, 1999
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