Volume 47, Number 1, July 1999
|Page(s)||110 - 115|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Doping-induced enhancement of the critical currents of grain boundaries in
Experimentalphysik VI, Center for Electronic Correlations and Magnetism Institute of Physics, Augsburg University - 86135 Augsburg, Germany
Accepted: 19 April 1999
The critical current density of grain boundaries in films is increased beyond the hitherto established limit by overdoping the superconductor. Using Ca-doping, values for the critical current density are obtained, that exceed the highest values reported ever for the undoped material by more than a factor of seven. Further, it is found that the overdoping strongly reduces the grain boundary normal-state resistivity. This systematic improvement of the grain boundary transport properties by doping is of great importance for applications of the high-Tc cuprates and gives insight into the mechanisms controlling the grain boundary behavior.
PACS: 74.72.-h – High-Tc compounds / 74.60.Jg – Critical currents / 74.62.Dh – Effects of crystal defects, doping and substitution
© EDP Sciences, 1999
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