Volume 47, Number 2, July II 1999
|Page(s)||203 - 207|
|Section||Condensed matter: structure, mechanical and thermal properties|
|Published online||01 September 2002|
Location of fission products in zirconia single crystals
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, IN2P3-CNRS Bât. 108, 91405 Orsay, France
2 Institute of Electronic Materials Technology - Wolczynska 133, 01-919 Warsaw, Poland The Andrzej Soltan Institute of Nuclear Studies - 05-400 Swierk, Poland
Accepted: 17 May 1999
The lattice location of specific fission products (Cs and I) in zirconia single crystals was investigated by using Rutherford backscattering and channeling experiments. The fission products were introduced into the matrix up to a concentration of a few at.% by ion implantation. The single crystals are strongly damaged during the implantation process, and the damage creation is almost the same for Cs or I ion implantation. The location of the implanted fission products inside the host matrix depends on the nature of the impurity. A significant substitutional fraction is observed in the case of Cs ions at low concentration, whereas I ions mainly occupy random sites. These different site occupancies are likely correlated to specific impurity-defect interactions or phase formation which can affect the transport mechanisms of fission products in the confinement matrix.
PACS: 61.72.Vv – Doping and impurity implantation in III-V and II-VI semiconductors / 61.80.Jh – Ion radiation effects / 61.85.+p – Channeling phenomena (blocking, energy loss, etc.)
© EDP Sciences, 1999
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.