Nanometer size determination of type-II domains in CuPt-ordered with high-pressure magneto-luminescence

J. Zeman; S. Jullian; G. Martinez; P. Y. Yu; K. Uchida

doi:10.1209/epl/i1999-00381-x

All issues

Volume 47 / No 2 (July II 1999)

Europhys. Lett., 47 2 (1999) 260-266

Abstract

Issue		Europhys. Lett. Volume 47, Number 2, July II 1999


Page(s)		260 - 266
Section		Condensed matter: electronic structure, electrical, magnetic and optical properties
DOI		https://doi.org/10.1209/epl/i1999-00381-x
Published online		01 September 2002

Europhys. Lett., 47 (2), pp. 260-266 (1999)

Nanometer size determination of type-II domains in CuPt-ordered $\rm GaInP_2$ with high-pressure magneto-luminescence

J. Zeman¹, S. Jullian¹, G. Martinez¹, P. Y. Yu² and K. Uchida³

¹ Grenoble High Magnetic Field Laboratory MPI-FKF/CNRS 25, Av. des Martyrs, BP 166, 38042 Grenoble Cedex 9, France
² Department of Physics, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory Berkeley, CA 94720, USA
³ Department of Communications and Systems The University of Electro-Communications 1-5-1 Choufugaoka Choufu, Tokyo 182, Japan

Received: 3 May 1999
Accepted: 7 May 1999

Abstract

Photoluminescence originating from the GaAs/ (ordered) $\rm GaInP_2$ interface has been studied under the simultaneous application of high magnetic field and high pressure. A sharp threshold dependence on magnetic field was observed in the intensity of the spatially indirect transition between electrons in $\rm GaInP_2$ and holes in GaAs. A model involving trapping of electrons from GaAs into "quantum boxes” formed by type-II ordered GaInP₂ domains is proposed. This model reproduces the pressure-induced variations of the quantum box sizes and demonstrates the ability of this technique to study the properties of nanometer size systems.

PACS: 78.66.Fd – III-V semiconductors / 78.55.-m – Photoluminescence / 73.40.Kp – III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

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