Volume 47, Number 2, July II 1999
|Page(s)||260 - 266|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Nanometer size determination of type-II domains in CuPt-ordered with high-pressure magneto-luminescence
Grenoble High Magnetic Field Laboratory MPI-FKF/CNRS 25, Av. des Martyrs, BP 166, 38042 Grenoble Cedex 9, France
2 Department of Physics, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory Berkeley, CA 94720, USA
3 Department of Communications and Systems The University of Electro-Communications 1-5-1 Choufugaoka Choufu, Tokyo 182, Japan
Accepted: 7 May 1999
Photoluminescence originating from the GaAs/ (ordered) interface has been studied under the simultaneous application of high magnetic field and high pressure. A sharp threshold dependence on magnetic field was observed in the intensity of the spatially indirect transition between electrons in and holes in GaAs. A model involving trapping of electrons from GaAs into "quantum boxes” formed by type-II ordered GaInP2 domains is proposed. This model reproduces the pressure-induced variations of the quantum box sizes and demonstrates the ability of this technique to study the properties of nanometer size systems.
PACS: 78.66.Fd – III-V semiconductors / 78.55.-m – Photoluminescence / 73.40.Kp – III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
© EDP Sciences, 1999
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