Issue |
Europhys. Lett.
Volume 47, Number 3, August I 1999
|
|
---|---|---|
Page(s) | 371 - 377 | |
Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
DOI | https://doi.org/10.1209/epl/i1999-00398-1 | |
Published online | 01 September 2002 |
On the nature of grain boundaries in the colossal magnetoresistance manganites
II. Physikalisches Institut, Universität zu Köln Zülpicherstr. 77, D-50937 Köln, Germany
Received:
23
March
1999
Accepted:
1
June
1999
The electrical transport properties of grain boundaries in the epitaxial thin films have been studied as a
function of temperature and applied magnetic field. Below the Curie
temperature TC an additional grain boundary resistance, highly non-linear
current-voltage curves, and a large magnetoresistive effect in the whole
temperature regime below TC are found. The results can be explained
consistently by the presence of a disordered, a few nm wide paramagnetic
grain boundary layer that is depleted below TC due to an increase of the
work function of the ferromagnetic grain material adjacent to this layer. The
related band bending and space charge effects are important for the physics
of grain boundaries in the manganites.
PACS: 75.30.Vn – Colossal magnetoresistance / 73.40.-c – Electronic transport in interface structures / 75.70.Cn – Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)
© EDP Sciences, 1999
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