Volume 48, Number 4, November II 1999
|Page(s)||403 - 409|
|Section||Condensed matter: structure, mechanical and thermal properties|
|Published online||01 September 2002|
Tunneling states in tetrahedrally bonded amorphous semiconductors
Department of Physics, Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong, China
Accepted: 20 September 1999
Using molecular dynamics, we construct a structural model of amorphous silicon which produces well-relaxed and long-lasting structures with radial distribution functions that agree well with experimental results. The model produces a sufficient number of double-well potentials with low asymmetries, enabling a structurally-explicit microscopic portrayal of tunneling states in covalently bonded amorphous systems. A new structural characterization method is used to identify the possible origin of the tunneling states in amorphous silicon. Based on the study of the short-range order, we suggest that the tunneling states in amorphous silicon are predominantly associated with dangling bonds.
PACS: 61.43.Dq – Amorphous semiconductors, metals, and alloys / 61.43.Bn – Structural modeling: serial-addition models, computer simulation / 02.70.Ns – Molecular dynamics and particle methods
© EDP Sciences, 1999
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