Volume 49, Number 3, February I 2000
|Page(s)||369 - 375|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 September 2002|
Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single-electron transistors
Solid State Physics Laboratory, ETH Zürich -
CH-8093 Zürich, Switzerland
2 Swiss Federal Office of Metrology OFMET - CH-3003 Bern-Wabern, Switzerland
3 Physikalisch-Technische Bundesanstalt PTB - D-38116 Braunschweig, Germany
Accepted: 18 November 1999
The distribution of nearest-neighbour spacings of Coulomb blockade oscillation peaks in normal conducting aluminum single-electron transistors is found to be non-Gaussian. A pronounced tail to reduced spacings is observed, which we attribute to impurity-specific parametric charge rearrangements close to the transistor. Our observation may explain the absence of a Wigner-Dyson distribution in the experimental nearest-neighbour spacing distributions in semiconductor quantum dots.
PACS: 73.23.Hk – Coulomb blockade; single-electron tunnelling / 73.50.Gr – Charge carriers: generation, recombination, lifetime, trapping, mean free paths
© EDP Sciences, 2000
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