Volume 49, Number 4, February II 2000
|Page(s)||501 - 506|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 September 2002|
Oxygen diffusion in off–c-axis normal-state films
Institut für Experimentelle und Angewandte Physik
Universität Regensburg, 93040 Regensburg, Germany
2 Institut für Angewandte Physik Johannes-Kepler-Universität Linz, 4040 Linz, Austria
Corresponding author: email@example.com
Accepted: 7 December 1999
The anisotropy of the oxygen diffusion in the high-T c-super con duc tor Bi2Sr2CaCu2O was investigated using off–c-axis prepared thin films. High-quality oriented films with thickness 1000 Å and c-axis inclined by a tilt angle α with respect to the normal of the film surface were grown up to . Oxygen diffusion following a small change of the ambient oxygen partial pressure in the temperature range was monitored by in situ resistance measurements. Diffusion times according to an activated process were found, with E = 0.6 eV and becoming smaller with increasing tilt angle. A comparison of the experimental with a calculation of for an ideal monocrystalline film suggests that as-grown films consist of crystalline grains with la te ral dimensions .
PACS: 74.76.Bz – High-Tc films / 74.72.Hs – Bi-based cuprates / 66.30.-h – Diffusion in solids
© EDP Sciences, 2000
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