Volume 49, Number 4, February II 2000
|Page(s)||501 - 506|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 September 2002|
Oxygen diffusion in off–c-axis normal-state films
Institut für Experimentelle und Angewandte Physik
Universität Regensburg, 93040 Regensburg, Germany
2 Institut für Angewandte Physik Johannes-Kepler-Universität Linz, 4040 Linz, Austria
Corresponding author: firstname.lastname@example.org
Accepted: 7 December 1999
The anisotropy of the oxygen diffusion in the high-T c-super con duc tor Bi2Sr2CaCu2O was investigated using off–c-axis prepared thin films. High-quality oriented films with thickness 1000 Å and c-axis inclined by a tilt angle α with respect to the normal of the film surface were grown up to . Oxygen diffusion following a small change of the ambient oxygen partial pressure in the temperature range was monitored by in situ resistance measurements. Diffusion times according to an activated process were found, with E = 0.6 eV and becoming smaller with increasing tilt angle. A comparison of the experimental with a calculation of for an ideal monocrystalline film suggests that as-grown films consist of crystalline grains with la te ral dimensions .
PACS: 74.76.Bz – High-Tc films / 74.72.Hs – Bi-based cuprates / 66.30.-h – Diffusion in solids
© EDP Sciences, 2000
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.