Volume 51, Number 1, July I 2000
|Page(s)||116 - 121|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 September 2002|
 tunneling under applied magnetic fields into : Possible evidence for a field-induced idxy gap component
School of Physics and Astronomy, Raymond and Beverly Sackler Faculty
of Exact Sciences, Tel Aviv University - 69978 Tel Aviv, Israel
Accepted: 9 May 2000
Tunneling characteristics along the  direction were measured in InsulatorIn junctions as a function of the magnetic field H, applied parallel to the plane of the junction, along the c-axis. The junctions exhibit a Zero Bias Conductance Peak (ZBCP) which splits as . The data is in better agreement with a field-induced idxy gap component than with a Doppler-shift–induced field splitting.
PACS: 74.72.-h – High-Tc compounds / 74.50.+r – Proximity effects, weak links, tunneling phenomena, and Josephson effects
© EDP Sciences, 2000
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