Issue |
Europhys. Lett.
Volume 51, Number 1, July I 2000
|
|
---|---|---|
Page(s) | 116 - 121 | |
Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
DOI | https://doi.org/10.1209/epl/i2000-00343-4 | |
Published online | 01 September 2002 |
[110] tunneling under applied magnetic fields
into
:
Possible evidence for a field-induced idxy gap component
School of Physics and Astronomy, Raymond and Beverly Sackler Faculty
of Exact Sciences, Tel Aviv University - 69978 Tel Aviv, Israel
Received:
21
January
2000
Accepted:
9
May
2000
Tunneling characteristics along the [110] direction were measured in Insulator
In junctions as a
function of the magnetic field H, applied parallel to the plane of the junction, along the c-axis.
The junctions exhibit a Zero Bias Conductance Peak (ZBCP) which splits as
. The data
is in better agreement with a field-induced idxy gap component than with a
Doppler-shift–induced field splitting.
PACS: 74.72.-h – High-Tc compounds / 74.50.+r – Proximity effects, weak links, tunneling phenomena, and Josephson effects
© EDP Sciences, 2000
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