Volume 51, Number 2, July 2000
|Page(s)||168 - 173|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 September 2002|
Dependence of the radiative recombination lifetime upon electric field in silicon quantum dots embedded into
IMEL/NCSR Demokritos - Aghia Paraskevi
153 10 Athens, Greece
Accepted: 18 May 2000
The influence of the electric field on the radiative recombination of an electron-hole pair in a silicon quantum dot is assessed by means of a variational calculation. In contrast with III-V devices, in the case of silicon the use of as a matrix makes possible the application of very large electric fields, which should indeed have a considerable impact on the radiation lifetime. For a distribution of crystallites, a growing electric field should lead to a quenching of the radiative recombination in the larger dots and to a noticeable shift of the spectrum.
PACS: 71.70.Ej – Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect / 78.60.Fi – Electroluminescence / 78.66.-w – Optical properties of specific thin films, surfaces, and low-dimensional structures
© EDP Sciences, 2000
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