| Issue |
Europhys. Lett.
Volume 51, Number 4, August II 2000
|
|
|---|---|---|
| Page(s) | 401 - 406 | |
| Section | Condensed matter: structure, mechanical and thermal properties | |
| DOI | https://doi.org/10.1209/epl/i2000-00508-7 | |
| Published online | 01 September 2002 | |
MeV ion-induced movement of lattice disorder in single crystalline silicon
1
School of Physical Sciences, Jawaharlal Nehru University - New
Delhi-110067, India
2
Department of Mathematics, Heriot-Watt University - Edinburgh EH14 4AS,
UK
Corresponding author: psen@jnuniv.ernet.in
Received:
22
December
1999
Accepted:
8
June
2000
We provide experimental evidence for the transport of atomic disorder over large distances, in device grade single-crystalline silicon, following irradiation with 200 MeV silver ions. Pile-up of lattice defects or disorder is effected at predetermined locations, spatially separated from the irradiation site. These are revealed by STM scans with atomic resolution, of an intermediate region, spanning from irradiated to shadowed parts of the crystal surface. The experimental results are consistent with transport of disorder through breather-like intrinsic localised excitations.
PACS: 61.80.Jh – Ion radiation effects / 07.79.-v – Scanning probe microscopes, components, and techniques / 05.45.Yv – Solitons
© EDP Sciences, 2000
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