Volume 51, Number 5, September I 2000
|Page(s)||527 - 533|
|Section||Condensed matter: structure, mechanical and thermal properties|
|Published online||01 September 2002|
Scanning tunneling spectroscopy on the surface
Institute of Solid State Physics RAS
142432 Chernogolovka, Moscow district, Russia
2 Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik Max-Wien-Platz 1, D-07743 Jena, Germany
Corresponding author: firstname.lastname@example.org
Accepted: 4 July 2000
Surface topographic (STM) and spectroscopic (STS) studies have been performed on the -terminated - surface using a scanning tunneling microscope (STM) in ultrahigh vacuum. High-quality () overstructures have been prepared as observed by LEED and STM. The regular () surface sites revealed much weaker I(V) dependences as compared to the defect sites when measured using the constant tip-surface gap technique. The normalized vs. V spectra exhibit distinct bands of empty and filled states, which are separated by for both surface sites, respectively. The results thereby support a Mott-Hubbard-type model as used for the calculation of the density of states. However, the STS spectra become completely featureless in the range of small tip-surface distances and reveal a “metallic”-like Ohmic I-V dependence.
PACS: 61.16.Ch – Scanning probe microscopy: scanning tunneling, atomic force, etc / 73.20.At – Surface states, band structure, electron density of states / 79.60.Bm – Clean metal, semiconductor, and insulator surfaces
© EDP Sciences, 2000
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