| Issue |
Europhys. Lett.
Volume 51, Number 5, September I 2000
|
|
|---|---|---|
| Page(s) | 527 - 533 | |
| Section | Condensed matter: structure, mechanical and thermal properties | |
| DOI | https://doi.org/10.1209/epl/i2000-00370-1 | |
| Published online | 01 September 2002 | |
Scanning tunneling spectroscopy
on the 
surface
1
Institute of Solid State Physics RAS
142432 Chernogolovka, Moscow district, Russia
2
Friedrich-Schiller-Universität Jena, Institut für
Festkörperphysik
Max-Wien-Platz 1, D-07743 Jena, Germany
Corresponding author: vgasparo@issp.ac.ru
Received:
7
December
1999
Accepted:
4
July
2000
Surface topographic (STM) and spectroscopic (STS) studies have been
performed on the 
-terminated 
-
surface using a scanning tunneling microscope (STM) in ultrahigh vacuum. High-quality
(
) overstructures have been prepared as observed by LEED
and STM. The regular () surface sites revealed much weaker I(V) dependences as
compared to the defect sites when measured using the constant tip-surface gap technique. The
normalized 
vs. V spectra exhibit distinct bands of empty and filled
states, which are separated by 
for both surface sites, respectively.
The results thereby support a Mott-Hubbard-type model as used for the
calculation of the density of states. However, the STS spectra become
completely featureless in the range of small tip-surface distances and
reveal a “metallic”-like Ohmic I-V dependence.
PACS: 61.16.Ch – Scanning probe microscopy: scanning tunneling, atomic force, etc / 73.20.At – Surface states, band structure, electron density of states / 79.60.Bm – Clean metal, semiconductor, and insulator surfaces
© EDP Sciences, 2000
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