| Issue |
Europhys. Lett.
Volume 52, Number 3, November I 2000
|
|
|---|---|---|
| Page(s) | 344 - 350 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2000-00445-5 | |
| Published online | 01 September 2002 | |
Magnetic tunnel junctions with single-crystal electrodes: A crystal anisotropy of tunnel magneto-resistance
1
Electrotechnical Laboratory - Tsukuba 305-8568, Japan
2
Joint Research Center for Atom Technology (JRCAT)
Angstrom Technology Partnership (ATP) - Tsukuba 305-0046, Japan
3
JRCAT, National Institute for Advanced Interdisiplinary
(NAIR) Tsukuba 305-8562, Japan
Received:
5
June
2000
Accepted:
15
September
2000
A strong dependence of tunnel magnetoresistance (TMR) on the crystal
orientation of ferromagnetic electrodes was confirmed experimentally.
We studied the TMR of 
tunnel
junctions with single-crystal Fe electrodes of different crystal
orientations and found that the TMR ratio increased from 13% to 42%
at 2K (8% to 26% at room temperature) when the crystal
orientation was changed from (100) to (211). Such a TMR anisotropy
could be explained in terms of the anisotropic spin polarization of Fe
bulk and/or interface electronic states. The importance of
the “momentum-filtering” effect of the tunnel barrier was also discussed.
PACS: 73.40.Gk – Tunneling / 73.40.Rw – Metal-insulator-metal structures / 75.70.Pa – Giant magnetoresistance
© EDP Sciences, 2000
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.