| Issue |
Europhys. Lett.
Volume 52, Number 5, December I 2000
|
|
|---|---|---|
| Page(s) | 594 - 600 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2000-00479-1 | |
| Published online | 01 September 2002 | |
Positive exchange bias in ferromagnetic-ferrimagnetic
bilayers: 
Laboratoire de Physique des Matériaux (UMR CNRS 7556), Université H.
Poincaré
BP 239, F-54506 Vandoeuvre-Les-Nancy cedex, France
Received:
10
March
2000
Accepted:
2
October
2000
Positive exchange bias is shown to occur in (ferromagnetic (FeSn)/ferrimagnetic (FeGd)) bilayers. As the net magnetisation in the ferrimagnetic layer is not zero, in contrast to “regular” exchange bias observed in ferro/antiferromagnetic systems, we could detect the magnetic configuration of both layers by magnetisation, ac-susceptibility and resistivity measurements. The results allow us to conclude that the exchange bias effect is due to an antiferromagnetic coupling at the interface between the magnetisation of the layers through a domain wall located at the interface. The influence of this magnetic domain wall on transport and ac-susceptibility is presented.
PACS: 75.60.Ch – Domain walls and domain structure / 75.60.Ej – Magnetization curves, hysteresis, Barkhausen and related effects / 75.70.-i – Magnetic films and multilayers
© EDP Sciences, 2000
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