| Issue |
Europhys. Lett.
Volume 53, Number 2, January 2001
|
|
|---|---|---|
| Page(s) | 233 - 239 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2001-00142-5 | |
| Published online | 01 December 2003 | |
Proton nature of radiation-induced positive charge in
layers on 
Department of Physics, University of Leuven
Celestijnenlaan 200D, B-3001
Leuven, Belgium
Received:
31
August
2000
Accepted:
13
November
2000
Liberation of atomic hydrogen is detected upon photon 
irradiation
of thermally grown
on Si followed by neutralization of the created positive charge by electrons.
This indicates the
formation and trapping of protons in the oxide. Additional evidence for this
is provided by an
isotopic effect in the positive charge decay observed in samples enriched
with 
and 
. The most
efficient proton generation process is suggested as hole trapping by 
centers, leading to the
formation of 
defects (E' centers) in the oxide.
PACS: 71.55.Jv – Disordered structures; amorphous and glassy solids / 72.20.Jv – Charge carriers: generation, recombination, lifetime, and trapping / 73.61.Ng – Insulators
© EDP Sciences, 2001
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