Volume 53, Number 2, January 2001
|Page(s)||233 - 239|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 December 2003|
Proton nature of radiation-induced positive charge in layers on
Department of Physics, University of Leuven
Celestijnenlaan 200D, B-3001
Accepted: 13 November 2000
Liberation of atomic hydrogen is detected upon photon irradiation of thermally grown on Si followed by neutralization of the created positive charge by electrons. This indicates the formation and trapping of protons in the oxide. Additional evidence for this is provided by an isotopic effect in the positive charge decay observed in samples enriched with and . The most efficient proton generation process is suggested as hole trapping by centers, leading to the formation of defects (E' centers) in the oxide.
PACS: 71.55.Jv – Disordered structures; amorphous and glassy solids / 72.20.Jv – Charge carriers: generation, recombination, lifetime, and trapping / 73.61.Ng – Insulators
© EDP Sciences, 2001
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