Volume 53, Number 2, January 2001
|Page(s)||169 - 175|
|Published online||01 December 2003|
A lattice gas model of II-VI(001) semiconductor surfaces
Institut für Theoretische Physik und Astrophysik
Julius-Maximilians-Universität Würzburg -
Am Hubland, D-97074 Würzburg, Germany
2 Sonderforschungsbereich 410, Julius-Maximilians-Universität Würzburg Am Hubland, D-97074 Würzburg, Germany
3 Institut für Physikalische und Theoretische Chemie Rheinische Friedrich-Wilhelms-Universität - Wegelerstr. 12, D-53115 Bonn, Germany
Accepted: 15 November 2000
We introduce an anisotropic two-dimensional lattice gas model of metal-termi nated II-VI(001) semiconductor surfaces. Important properties of this class of materials are represented by effective NN and NNN interactions, which results in the competition of two vacancy structures on the surface. We demonstrate that the experimentally observed transition from the dominant ordering of the CdTe(001) surface to a local arrangement of Cd atoms can be explained as a phase transition in thermal equilibrium. The model is studied by means of transfer-matrix and Monte Carlo techniques. The analysis shows that the small energy difference of the competing reconstructions determines to a large extent the nature of the different phases. Possible implications for further experimental research are discussed.
PACS: 05.50.+q – Lattice theory and statistics (Ising, Potts, etc.) / 68.35.Rh – Phase transitions and critical phenomena / 81.05.Dz – II-VI semiconductors
© EDP Sciences, 2001
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.