Volume 53, Number 4, February 2001
|Page(s)||539 - 543|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 December 2003|
On the magnetoresistance of finite semiconductors
CICATA-IPN - Legaria 694 col. Irrigacion 11500, México D.F., Mexico
2 Departamento de Fisica CINVESTAV del Instituto Politécnico Nacional Apdo. Postal 14-740 Mexico D.F., C.P. 07000 Mexico
3 ESFM edificio 9, Instituto Politécnico Nacional - U.P. Adolfo Lopez Mateos Col. Lindavista, C.P. 07738, Mexico D.F., Mexico
4 Departamento de Matematicas CINVESTAV del Instituto Politécnico Nacional Apdo. Postal 14-740 Mexico D.F., C.P. 07000 Mexico
Corresponding author: firstname.lastname@example.org
Accepted: 4 December 2000
We show in this work that the magnetoresistance in a weak magnetic field B under certain conditions has a linear dependence on the magnetic field B. We obtain new formulas for the quadratic and linear dependence of the magnetoresistance on the magnetic field in bounded semiconductors. The linear contribution to the magnetoresistance arises from the spatial dependence of the potential at the electrical contacts. Some fluctuation of physical characteristics at the contacting planes always exists in real experiments, and it leads to the spatial dependence of the potential at the contacts. We describe the inhomogeneity of the potentials at the contacting planes x=0 and x=a accordingly by the functions , . The spatial dependence of the contacting potentials can be determined through the magnetoresistance as a function of the magnetic field.
PACS: 72.15.Gd – Galvanomagnetic and other magnetotransport effects / 75.70.Ak – Magnetic properties of monolayers and thin films / 02.30.Jr – Partial differential equations
© EDP Sciences, 2001
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