| Issue |
Europhys. Lett.
Volume 53, Number 6, March 2001
|
|
|---|---|---|
| Page(s) | 790 - 796 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2001-00221-7 | |
| Published online | 01 December 2003 | |
The breakdown of the temperature dependence of the photoluminescence peak position in single asymmetric quantum wells
1
Universidade Federal de Uberlândia,
Departamento de Ciências Físicas
Laboratório de Novos Materiais Isolantes
e Semicondutores CEP 38400-902,
Uberlândia-MG, Brazil
2
Universidade de Brasília, Instituto de Física,
Núcleo de Física Aplicada C.P. 04455, CEP
70919-970, Brasília-DF, Brazil
Corresponding author: pcmor@fis.unb.br
Received:
2
August
2000
Accepted:
5
January
2001
Photoluminescence measurements performed in a wide range of
temperature (10-100
) and optical excitation intensity
(0.03-90
), and self-consistent numerical
calculation is used to investigate n-doped
/
x
single asymmetric quantum wells.
Under strong optical excitation intensity, a red-shift in the
recombination energy with increasing temperature is observed. In
the weak optical excitation condition, however, a breakdown of
the recombination energy shift is found. The flat response was
attributed to the combined effects of the temperature dependence
of the bandgap energy, band bending, and bandgap renormalization.
PACS: 78.55.-m – Photoluminescence / 78.66.-w – Optical properties of specific thin films, surfaces, and low-dimensional structures / 78.55.Cr – III-V semiconductors
© EDP Sciences, 2001
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