Volume 53, Number 6, March 2001
|Page(s)||790 - 796|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 December 2003|
The breakdown of the temperature dependence of the photoluminescence peak position in single asymmetric quantum wells
Universidade Federal de Uberlândia,
Departamento de Ciências Físicas
Laboratório de Novos Materiais Isolantes
e Semicondutores CEP 38400-902,
2 Universidade de Brasília, Instituto de Física, Núcleo de Física Aplicada C.P. 04455, CEP 70919-970, Brasília-DF, Brazil
Corresponding author: firstname.lastname@example.org
Accepted: 5 January 2001
Photoluminescence measurements performed in a wide range of temperature (10-100) and optical excitation intensity (0.03-90), and self-consistent numerical calculation is used to investigate n-doped / x single asymmetric quantum wells. Under strong optical excitation intensity, a red-shift in the recombination energy with increasing temperature is observed. In the weak optical excitation condition, however, a breakdown of the recombination energy shift is found. The flat response was attributed to the combined effects of the temperature dependence of the bandgap energy, band bending, and bandgap renormalization.
PACS: 78.55.-m – Photoluminescence / 78.66.-w – Optical properties of specific thin films, surfaces, and low-dimensional structures / 78.55.Cr – III-V semiconductors
© EDP Sciences, 2001
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