Volume 54, Number 5, June 2001
|Page(s)||654 - 660|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 December 2003|
Mechanically controlled tunneling of a single atomic defect
Physikalisches Institut, Universität Karlsruhe - D-76128 Karlsruhe, Germany
Accepted: 19 March 2001
This letter reports experiments on the conductance of mesoscopic Bi films which are polycrystalline and contain single atomic two-level tunneling systems. These defects act as electron scattering centers and give rise to random telegraph signals in the conductance. External strain, applied to the samples at low temperatures, changes the asymmetry energy of the double-well potential of the tunneling particle and thus controls its average dwell time in either well. The measurements allow to determine in a direct way the deformation potential of a particular tunneling defect.
PACS: 73.23.-b – Electronic transport in mesoscopic systems / 72.10.Fk – Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effects) / 66.35.+a – Quantum tunneling of defects
© EDP Sciences, 2001
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