| Issue |
Europhys. Lett.
Volume 55, Number 2, July 2001
|
|
|---|---|---|
| Page(s) | 280 - 286 | |
| Section | Interdisciplinary physics and related areas of science and technology | |
| DOI | https://doi.org/10.1209/epl/i2001-00410-4 | |
| Published online | 01 December 2003 | |
Pseudogap formation in 4d transition metal oxide 
1
School of Physics, Seoul National University - Seoul 151-747, Korea
2
Research Center for Oxide Electronics, Seoul National University Seoul 151-747, Korea
3
Center for Strongly Correlated Materials Research, Seoul National University
Seoul 151-747, Korea
4
Department of Physics, University of Seoul - Seoul 130-743, Korea
5
National High Magnetic Field Laboratory,
Florida State University Tallahassee, FL 32306,
USA
Received:
5
February
2001
Accepted:
30
April
2001
Optical spectra of nine-layer BaRuO3 show clear electrodynamic response
changes due to a pseudogap formation. As temperature decreases, the
pseudogap formation induces a gradual reduction of carrier density n and
an abrupt suppression of scattering rate 
. It was found that the
competition between n and can induce a crossover from metallic
to insulator-like regions. A clear development of the pseudogap as well as
the coherent component in BaRuO3 is evidently distinguished from other
pseudogap phenomena observed in high Tc cuprates and heavy-electron
systems.
PACS: 78.20.-e – Optical properties of bulk materials and thin films / 78.30.-j – Infrared and Raman spectra / 78.67.-n – Optical properties of nanoscale materials and structures
© EDP Sciences, 2001
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