Volume 55, Number 2, July 2001
|Page(s)||280 - 286|
|Section||Interdisciplinary physics and related areas of science and technology|
|Published online||01 December 2003|
Pseudogap formation in 4d transition metal oxide
School of Physics, Seoul National University - Seoul 151-747, Korea
2 Research Center for Oxide Electronics, Seoul National University Seoul 151-747, Korea
3 Center for Strongly Correlated Materials Research, Seoul National University Seoul 151-747, Korea
4 Department of Physics, University of Seoul - Seoul 130-743, Korea
5 National High Magnetic Field Laboratory, Florida State University Tallahassee, FL 32306, USA
Accepted: 30 April 2001
Optical spectra of nine-layer BaRuO3 show clear electrodynamic response changes due to a pseudogap formation. As temperature decreases, the pseudogap formation induces a gradual reduction of carrier density n and an abrupt suppression of scattering rate . It was found that the competition between n and can induce a crossover from metallic to insulator-like regions. A clear development of the pseudogap as well as the coherent component in BaRuO3 is evidently distinguished from other pseudogap phenomena observed in high Tc cuprates and heavy-electron systems.
PACS: 78.20.-e – Optical properties of bulk materials and thin films / 78.30.-j – Infrared and Raman spectra / 78.67.-n – Optical properties of nanoscale materials and structures
© EDP Sciences, 2001
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