Volume 55, Number 4, August 2001
|Page(s)||566 - 572|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 December 2003|
Spin diffusion in doped semiconductors: The role of Coulomb interactions
Institute for Scientific Interchange (ISI) Viale Settimio Severo
65, 10133 Torino, Italy
2 Department of Physics, University of Missouri Columbia, MO 65211, USA
Accepted: 5 June 2001
We examine the effect of Coulomb interaction on the mobility and diffusion of spin packets in doped semiconductors. We find that the diffusion constant is reduced, relative to its non-interacting value, by the combined effect of Coulomb-enhanced spin susceptibility and spin Coulomb drag. In ferromagnetic semiconductors, the spin diffusion constant vanishes at the ferromagnetic transition temperature.
PACS: 75.50.Pp – Magnetic semiconductors / 75.40.Gb – Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.) / 78.47.+p – Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter
© EDP Sciences, 2001
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