Volume 55, Number 4, August 2001
|Page(s)||552 - 558|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 December 2003|
Resonant tunneling in partially disordered silicon nanostructures
Nanoscale Silicon Research Initiative, Department of
Electrical and Computer Engineering, University of
Rochester - Rochester NY 14627, USA
2 Technische Universität of München, Physik-Department E16 D 85747 Garching, Germany
3 Institute for Microstructural Sciences, National Research Council Ottawa, Canada K1A 0R6
4 Institut d'Electronique et de Microélectronique du Nord Département Institut Supérieur d'Electronique du Nord 41 boulevard Vauban, 59046 Lille Cedex, France
Corresponding author: email@example.com
Accepted: 6 June 2001
Low-temperature vertical carrier transport in layered structures comprised of nanocrystals separated in the growth direction by angstrom-thick layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of nanocrystals. Tight-binding calculations of the quantum confinement effect for different nanocrystal sizes and shapes strongly support the tunneling model.
PACS: 73.63.Bd – Nanocrystalline materials
© EDP Sciences, 2001
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