Volume 55, Number 4, August 2001
|Page(s)||552 - 558|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 December 2003|
Resonant tunneling in partially disordered silicon nanostructures
Nanoscale Silicon Research Initiative, Department of
Electrical and Computer Engineering, University of
Rochester - Rochester NY 14627, USA
2 Technische Universität of München, Physik-Department E16 D 85747 Garching, Germany
3 Institute for Microstructural Sciences, National Research Council Ottawa, Canada K1A 0R6
4 Institut d'Electronique et de Microélectronique du Nord Département Institut Supérieur d'Electronique du Nord 41 boulevard Vauban, 59046 Lille Cedex, France
Corresponding author: firstname.lastname@example.org
Accepted: 6 June 2001
Low-temperature vertical carrier transport in layered structures comprised of nanocrystals separated in the growth direction by angstrom-thick layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of nanocrystals. Tight-binding calculations of the quantum confinement effect for different nanocrystal sizes and shapes strongly support the tunneling model.
PACS: 73.63.Bd – Nanocrystalline materials
© EDP Sciences, 2001
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.