| Issue |
Europhys. Lett.
Volume 55, Number 4, August 2001
|
|
|---|---|---|
| Page(s) | 532 - 538 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2001-00448-8 | |
| Published online | 01 December 2003 | |
Negative deviations from Matthiessen's rule for 
and 
1
Department of Physics, Bar-Ilan University - Ramat-Gan 52900, Israel
2
Laboratoire des Solides Irradiés, Ecole Polytechnique - 91128 Palaiseau
Cedex, France
3
T. H. Geballe Laboratory for Advanced Materials, Stanford University
Stanford, CA 94305, USA
Corresponding author: kleinl@mail.biu.ac.il
Received:
20
March
2001
Accepted:
8
June
2001
We have measured the change in the resistivity of thin films
of and upon introducing point defects by electron
irradiation at low temperatures, and we find significant negative
deviations from Matthiessen's rule. For a fixed irradiation dose, the
induced change in resistivity decreases with increasing temperature.
Moreover, for a fixed temperature, the increase in resistivity with
irradiation is found to be sublinear. We suggest that the observed
behavior is due to the marked anisotropic scattering of the electrons
together with their relatively short mean free path (both characteristic of
many metallic oxides including cuprates) which amplify effects related to the
Pippard ineffectiveness condition.
PACS: 72.15.-v – Electronic conduction in metals and alloys / 73.50.-h – Electronic transport phenomena in thin films
© EDP Sciences, 2001
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