Volume 55, Number 4, August 2001
|Page(s)||532 - 538|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 December 2003|
Negative deviations from Matthiessen's rule for and
Department of Physics, Bar-Ilan University - Ramat-Gan 52900, Israel
2 Laboratoire des Solides Irradiés, Ecole Polytechnique - 91128 Palaiseau Cedex, France
3 T. H. Geballe Laboratory for Advanced Materials, Stanford University Stanford, CA 94305, USA
Corresponding author: firstname.lastname@example.org
Accepted: 8 June 2001
We have measured the change in the resistivity of thin films of and upon introducing point defects by electron irradiation at low temperatures, and we find significant negative deviations from Matthiessen's rule. For a fixed irradiation dose, the induced change in resistivity decreases with increasing temperature. Moreover, for a fixed temperature, the increase in resistivity with irradiation is found to be sublinear. We suggest that the observed behavior is due to the marked anisotropic scattering of the electrons together with their relatively short mean free path (both characteristic of many metallic oxides including cuprates) which amplify effects related to the Pippard ineffectiveness condition.
PACS: 72.15.-v – Electronic conduction in metals and alloys / 73.50.-h – Electronic transport phenomena in thin films
© EDP Sciences, 2001
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