Volume 55, Number 6, September II 2001
|Page(s)||781 - 787|
|Published online||01 December 2003|
Random-field Ising-type transition of pure and doped SBN from the relaxor into the ferroelectric state
Laboratorium für Angewandte Physik,
47048 Duisburg, Germany
2 Jožef Stefan Institute - P.O. Box 3000, 1001 Ljubljana, Slovenia
3 Fachbereich Physik, Universität Osnabrück - D-49069 Osnabrück, Germany
Accepted: 27 June 2001
Activated critical dynamics and vanishing of the susceptibility ratio in the zero-frequency limit unequivocally evidence the phase transitions of the uniaxial relaxor crystals SBN, SBN: and SBN: to refer to the three-dimensional random-field Ising universality class. The relaxor-like freezing of polar nanoregions within the precursor regime is successfully described within the framework of the mesoscopic uniaxial spherical random-bond random-field model.
PACS: 05.70.Jk – Critical point phenomena / 77.22.Ch – Permittivity (dielectric function)
© EDP Sciences, 2001
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