Volume 56, Number 5, December 2001
|Page(s)||722 - 728|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 December 2003|
Electronic-structure modifications induced by surface segregation in thin films
Department of Physics and Astronomy and the
Center for Material Research and Analysis, Behlen Laboratory,
University of Nebraska Lincoln, NE 68588-0111, USA
2 Material Physics Branch, Naval Research Laboratory - Washington DC 20375, USA
Corresponding author: email@example.com
Accepted: 20 September 2001
Using spin-polarized inverse photoemission and X-ray absorption spectroscopy techniques, we show that the electronic structure of thin films depends on the composition at the surface. With a gentle annealing procedure, the surface provides a maximum of 80% spin asymmetry at 0.5 above the Fermi level in spite of extensive segregation. A heavily annealed (restructured) surface exhibits a reduced surface "ordering" temperature of 240 (compared to the approximately 335 bulk value) as well as a reduced spin asymmetry value of 40% at 0.5 above Fermi energy.
PACS: 73.20.-r – Electron states at surfaces and interfaces / 68.35.Fx – Diffusion; interface formation / 75.25.+z – Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source X-ray scattering, etc.)
© EDP Sciences, 2001
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