Volume 57, Number 2, January 2002
|Page(s)||240 - 246|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 September 2002|
Infrared probe of metal-insulator transition in x and x amorphous alloys in magnetic field
Department of Physics, University of California San Diego,
La Jolla, CA 92093-0319, USA
2 Hewlett-Packard Laboratories - 1501 Page Mill Road, Palo Alto, CA 94304, USA
3 NHMFL, Florida State University - Tallahassee, FL 32310, USA
4 Department of Physics, Brookhaven National Laboratory Upton, NY 11973-5000, USA
Accepted: 29 October 2001
Carrier dynamics in amorphous a- x (, ) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy. Optical constants throughout the entire intra-gap region ( ) have been found to be anomalously sensitive to changes of temperature and/or magnetic field. The observed behavior is consistent with the model of hopping transport where the interaction of carriers with both the lattice and large core spin of ions is taken into account.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 71.38.Ht – Self-trapped or small polarons / 78.20.Ls – Magnetooptical effects
© EDP Sciences, 2002
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