| Issue |
Europhys. Lett.
Volume 57, Number 4, February 2002
|
|
|---|---|---|
| Page(s) | 546 - 549 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and opticalproperties | |
| DOI | https://doi.org/10.1209/epl/i2002-00496-6 | |
| Published online | 01 September 2002 | |
Disorder-dependence of the critical density in two-dimensional systems: An empirical relation
Physics Department, City College of the City University of New York New
York, NY 10031, USA
Received:
10
July
2001
Accepted:
16
November
2001
For five different electron and hole systems in two dimensions (Si
MOSFETs, p-GaAs,
p-SiGe, n-GaAs and n-AlAs), the critical density 
that marks the onset of
strong localization is shown to be a single power law function of the
scattering
rate 
deduced from the maximum mobility. The resulting curve
defines the
boundary separating a localized phase from a phase that exhibits metallic
behavior. The critical density 
in the limit of infinite
mobility.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 73.40.Qv – Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
© EDP Sciences, 2002
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