Volume 57, Number 4, February 2002
|Page(s)||546 - 549|
|Section||Condensed matter: electronic structure, electrical, magnetic, and opticalproperties|
|Published online||01 September 2002|
Disorder-dependence of the critical density in two-dimensional systems: An empirical relation
Physics Department, City College of the City University of New York New
York, NY 10031, USA
Accepted: 16 November 2001
For five different electron and hole systems in two dimensions (Si MOSFETs, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density that marks the onset of strong localization is shown to be a single power law function of the scattering rate deduced from the maximum mobility. The resulting curve defines the boundary separating a localized phase from a phase that exhibits metallic behavior. The critical density in the limit of infinite mobility.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 73.40.Qv – Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
© EDP Sciences, 2002
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