Issue |
Europhys. Lett.
Volume 57, Number 6, March 2002
|
|
---|---|---|
Page(s) | 872 - 878 | |
Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
DOI | https://doi.org/10.1209/epl/i2002-00591-8 | |
Published online | 01 August 2002 |
Effect of annealing on electron dephasing in three-dimensional polycrystalline metals
1
Institute of Physics, National Chiao Tung University
Hsinchu 300, Taiwan, ROC
2
Department of Physics, National Tsing Hua University
Hsinchu 300, Taiwan, ROC
3
Department of Electrophysics, National Chiao Tung University
Hsinchu 300, Taiwan, ROC
Corresponding author: jjlin@cc.nctu.edu.tw
Received:
30
July
2001
Accepted:
19
December
2001
We have studied the effect of thermal annealing on electron dephasing
times in three-dimensional polycrystalline
metals. Measurements are performed on as-sputtered and annealed AuPd
and Sb thick films, using the weak-localization method. In all
samples, we find that
possesses an extremely weak
temperature dependence as
. Our results show that
the effect of annealing is non-universal, and it depends strongly on
the amount of disorder quenched in the microstructures during
deposition. The observed “saturation" behavior of
cannot
be easily explained by magnetic scattering. We suggest that the issue
of saturation can be better addressed in three-dimensional, rather
than lower-dimensional, structures.
PACS: 73.23.-b – Electronic transport in mesoscopic systems / 73.20.Fz – Weak or Anderson localization
© EDP Sciences, 2002
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