| Issue |
Europhys. Lett.
Volume 57, Number 6, March 2002
|
|
|---|---|---|
| Page(s) | 859 - 865 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2002-00589-8 | |
| Published online | 01 August 2002 | |
Observation of a quasi-1D Mott-Hubbard insulator:
The re-entrant 
-
surface
1
Physics Department and Basic Science Research
Institute, Pohang University
of Science and Technology - San
31 Hyoja Dong, Pohang 790-784, Korea
2
Department of Physics, University of Seoul - 90
Cheonnong-dong Tongdaemun-gu, Seoul 130-743, Korea
3
Department of Physics, Myong Ji University - Yongin
Kyunggi-Do Seoul 449-728, Korea
4
IQUIPS, University of Seoul - 90 Cheonnong-dong,
Tongdaemun-gu Seoul 130-743, Korea
Received:
13
August
2001
Accepted:
19
December
2001
We have investigated the origin of a semiconducting phase of the
re-entrant - surface formed by adding
extra adatoms on the earlier phase at 1/3 monolayers
(MLs). The additional 
adatoms are found to form
quasi–one-dimensional (1D) atomic chains in our scanning
tunnelling microscopy images while keeping the surface
semiconducting. The unique features in our valence band and in
high-resolution electron-energy-loss spectra suggest that the
re-entrant 
surface is a Mott-Hubbard–type insulator.
We thus report a novel quasi-1D insulator-insulator transition
where electron-electron correlation plays a decisive role.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 73.20.-r – Electron states at surfaces and interfaces / 61.18.-j – Other methods of structure determination
© EDP Sciences, 2002
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