Volume 57, Number 6, March 2002
|Page(s)||859 - 865|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 August 2002|
Observation of a quasi-1D Mott-Hubbard insulator: The re-entrant - surface
Physics Department and Basic Science Research
Institute, Pohang University
of Science and Technology - San
31 Hyoja Dong, Pohang 790-784, Korea
2 Department of Physics, University of Seoul - 90 Cheonnong-dong Tongdaemun-gu, Seoul 130-743, Korea
3 Department of Physics, Myong Ji University - Yongin Kyunggi-Do Seoul 449-728, Korea
4 IQUIPS, University of Seoul - 90 Cheonnong-dong, Tongdaemun-gu Seoul 130-743, Korea
Accepted: 19 December 2001
We have investigated the origin of a semiconducting phase of the re-entrant - surface formed by adding extra adatoms on the earlier phase at 1/3 monolayers (MLs). The additional adatoms are found to form quasi–one-dimensional (1D) atomic chains in our scanning tunnelling microscopy images while keeping the surface semiconducting. The unique features in our valence band and in high-resolution electron-energy-loss spectra suggest that the re-entrant surface is a Mott-Hubbard–type insulator. We thus report a novel quasi-1D insulator-insulator transition where electron-electron correlation plays a decisive role.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 73.20.-r – Electron states at surfaces and interfaces / 61.18.-j – Other methods of structure determination
© EDP Sciences, 2002
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