Volume 58, Number 2, April 2002
|Page(s)||257 - 263|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 August 2002|
Magnetic diode effect in double-barrier tunnel junctions
IPCMS (UMR 7504 CNRS-ULP) - 23 rue de Loess, F-67037 Strasbourg cedex, France
2 Moscow Lomonosov State University - Moscow, 119899, Russia
Accepted: 23 January 2002
A quantum-statistical theory of spin-dependent tunneling through asymmetric magnetic double-barrier junctions is presented which describes both ballistic and diffuse tunneling by a single analytical expression. It is evidenced that the key parameter for the transition between these two tunneling regimes is the electron scattering. For these junctions a strong asymmetric behaviour in the I-V characteristics and the tunnel magnetoresistance (TMR) is predicted which can be controlled by an applied magnetic field. This phenomenon relates to the quantum well states in the middle metallic layer. The corresponding resonances in the current and the TMR are drastically phase-shifted under positive and negative voltage.
PACS: 72.10.-d – Theory of electronic transport; scattering mechanisms / 72.25.-b – Spin polarized transport / 73.40.Gk – Tunneling
© EDP Sciences, 2002
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