Volume 58, Number 3, May 2002
|Page(s)||448 - 454|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 August 2002|
Zero-bias anomaly in junctions
Center for Materials Research and Analysis and
Department of Physics and Astronomy
Behlen Laboratory of Physics,
University of Nebraska - Lincoln, NE 68588-0111, USA
Accepted: 5 February 2002
thin films, with crystallites of several microns size, provide the opportunity for the investigation of the intergrain tunneling between a few crystals separated by a 1–2 thick film. A pronounced zero-bias anomaly of the conductance is found at low temperatures. Combined photoemission and inverse photoemission temperature-dependent studies confirm the occurrence of Coulomb blockade. For the strong-tunneling case (), the magnetoresistance decreases strongly with bias. For the weak-tunneling case (), the magnetoresistance decreases by a factor two with increasing bias, as predicted by a co-tunneling model.
PACS: 75.70.-i – Magnetic properties of thin films, surfaces, and interfaces / 81.15.Gh – Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) / 82.30.Lp – Decomposition reactions (pyrolysis, dissociation, and fragmentation)
© EDP Sciences, 2002
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