Volume 58, Number 3, May 2002
|Page(s)||408 - 414|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 August 2002|
Room temperature electronic transport properties of metal and dilute alloys
Research Institute for Solid State Physics and
Optics, Hungarian Academy of Sciences H-1525 Budapest,
P.O.B. 49, Hungary
2 Department of Solid State Physics, Eötvös University H-1518 Budapest, P.O.B. 32, Hungary
3 Institut de Physique et Chimie des Matériaux de Strasbourg UMR C75040 (CNRS-ULP) - 23, rue du Loess, F-67037 Strasbourg, France
4 Institut für Festkörperanalytik und Strukturforschung, Institut für Festkörper- und Werkstofforschung - Helmholtzstrasse 20, D-01069 Dresden, Germany
Corresponding author: email@example.com
Accepted: 15 February 2002
It turned out from room temperature electrical resistivity and magnetoresistance studies of electrodeposited metal and dilute alloys that the incorporation of a small amount of into significantly reduces the anisotropic magnetoresistance (AMR). The influence of on the AMR of is explained by a drastic change of the asymmetry of d-band spin-up and spin-down electronic states at the Fermi level as revealed also by recent electronic band-structure calculations on -rich - alloys.
PACS: 72.25.Ba – Spin polarized transport in metals / 75.50.Cc – Other ferromagnetic metals and alloys / 75.70.Pa – Giant magnetoresistance
© EDP Sciences, 2002
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