High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition

¹ National Institute of Advanced Industrial Science and Technology Ikeda 563-8577, Japan
² Department of Physics, Wuhan University - Wuhan 430072, PRC

Corresponding author: c.liu@aist.go.jp

Received: 26 February 2002
Accepted: 13 May 2002

Abstract

One of the key problems to develop organic electroluminescence devices is related to the fabrication of very smooth, high-quality ITO layers at room temperature. It is very promising to incorporate the reactive irradiation of low-energy oxygen ions produced from an ECR source into the deposition of ITO film by electron-beam evaporation in vacuum. The influences of growth rate and film thickness on the structural, electrical and optical properties were characterized by X-ray diffraction, atomic-force microscopy, Hall effect and optical transmittance measurements. A very smooth surface of only 0.6 roughness (rms), almost one order of magnitude smaller than those obtained using other preparation methods, low resistivity of , high optical transmittance of 85% at wavelength 550 (including substrate) have been achieved at room temperature. Crystalline structure, which depends only on the thickness of the deposited ITO films, could be easily obtained at room temperature.