Volume 59, Number 4, August 2002
|Page(s)||606 - 611|
|Section||Condensed matter: electronic structure, electrical, magnetic, and opticalproperties|
|Published online||01 August 2002|
High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition
National Institute of Advanced Industrial Science
and Technology Ikeda 563-8577, Japan
2 Department of Physics, Wuhan University - Wuhan 430072, PRC
Corresponding author: email@example.com
Accepted: 13 May 2002
One of the key problems to develop organic electroluminescence devices is related to the fabrication of very smooth, high-quality ITO layers at room temperature. It is very promising to incorporate the reactive irradiation of low-energy oxygen ions produced from an ECR source into the deposition of ITO film by electron-beam evaporation in vacuum. The influences of growth rate and film thickness on the structural, electrical and optical properties were characterized by X-ray diffraction, atomic-force microscopy, Hall effect and optical transmittance measurements. A very smooth surface of only 0.6 roughness (rms), almost one order of magnitude smaller than those obtained using other preparation methods, low resistivity of , high optical transmittance of 85% at wavelength 550 (including substrate) have been achieved at room temperature. Crystalline structure, which depends only on the thickness of the deposited ITO films, could be easily obtained at room temperature.
PACS: 77.84.Bw – Elements, oxides, nitrides, borides, carbides, chalcogenides, etc / 81.15.Jj – Ion and electron beam-assisted deposition; ion plating / 68.55.Jk – Structure and morphology; thickness; crystalline orientation and texture
© EDP Sciences, 2002
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