Volume 59, Number 4, August 2002
|Page(s)||566 - 571|
|Section||Condensed matter: structure, mechanical and thermal properties|
|Published online||01 August 2002|
Imaging of stored charges in Si quantum dots by tapping and electrostatic force microscopy
ESRF - BP 220, F-38043 Grenoble, Cedex 9, France
2 Université Joseph Fourier - Grenoble, Cedex 9, France
3 LEPES-CNRS Grenoble - 25, Avenue des Martyrs, BP 166 38042 Grenoble, Cedex 9, France
4 Université de Bucarest, Faculté de Physique - OP 15, 96700 Magurele, Roumanie
5 CEA-LETI, Département des Technologies Silicium - 17, Avenue des Martyrs 38054 Grenoble, Cedex 9, France
Accepted: 3 June 2002
We studied the charge storage and subsequent imaging of silicon quantum dots (SiQD) embedded in a film by using atomic-force microscopy (AFM) in tapping and electrostatic force microscopy (EFM) modes. The controllable deposition of both positive and negative localized charges in SiQD is described. The dynamics of the deposited charges is studied and the charge decay time constant is determined from the measurements. A simple analysis is presented to explain the contrast in tapping and EFM images and to quantify the total amount of stored charge.
PACS: 68.37.Ps – Atomic force microscopy (AFM) / 73.63.Kv – Quantum dots
© EDP Sciences, 2002
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