| Issue |
Europhys. Lett.
Volume 59, Number 5, September 2002
|
|
|---|---|---|
| Page(s) | 742 - 748 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2002-00188-3 | |
| Published online | 01 September 2002 | |
First-principle investigation of barrier height fluctuations in metal/oxide heterojunctions in relation with large tunnel current fluctuations
Institut de Physique et de Chimie des Matériaux de Strasbourg
(UMR 7504 du CNRS),
Groupe d'Etude des Matériaux Métalliques 23 rue du Loess, F-67037 Strasbourg, France
Received:
4
February
2002
Accepted:
11
June
2002
The ab initio electronic structure of metal/oxide heterojunctions
is investigated for various interfaces simulating interface quality fluctuations.
The effective barrier height for tunnel transport,
taken from the relative position of the Fermi level
to the bottom of the valence band, is determined
in 
multilayers for several metal/oxide interfaces.
This study introduces another origin
for tunneling current fluctuations due to
barrier height fluctuations
related directly to the quality of the interfaces
through their electronic structure.
The large tunnel current dispersion resulting
from small fluctuations of the interfacial oxidation level
is discussed.
PACS: 73.20.-r – Electron states at surfaces and interfaces / 73.40.-c – Electronic transport in interface structures / 73.40.Rw – Metal-insulator-metal structures
© EDP Sciences, 2002
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