Volume 61, Number 2, January 2003
|Page(s)||235 - 241|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 January 2003|
On the nature of ferromagnetism in diluted magnetic semiconductors:
Departement Natuurkunde, Universiteit Antwerpen (UIA) Universiteitsplein 1, B-2610 Antwerpen, Belgium
2 N. S. Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences - Leninskii prospekt 31 117 907 Moscow, Russia
3 School of Physics and Astronomy, Tel Aviv University Ramat Aviv, 69 978 Tel Aviv, Israel
4 Physics Department, Ben-Gurion University 84 105 Beer-Sheva, Israel
Accepted: 29 October 2002
An energy level diagram is constructed on the basis of a microscopic Hamiltonian proposed for a description of interacting manganese impurities in diluted magnetic semiconductors (DMS). It is shown that ferromagnetism in p-type III-V DMS is governed by the strong hybridization of -electrons with the mobile holes and localized states near the top of the valence band. The Curie temperature estimated from the proposed kinematic exchange agrees with the experiments on . The model is also applicable to the system.
PACS: 71.27.+a – Strongly correlated electron systems; heavy fermions / 75.30.Hx – Magnetic impurity interactions / 75.50.Pp – Magnetic semiconductors
© EDP Sciences, 2003
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