Strain-induced surface structures on -covered : Epitaxial films on

A. Antons; Y. Cao; B. Voigtländer; K. Schroeder; R. Berger; S. Blügel

doi:10.1209/epl/i2003-00385-6

All issues

Volume 62 / No 4 (May 2003)

Europhys. Lett., 62 4 (2003) 547-553

Abstract

Issue		Europhys. Lett. Volume 62, Number 4, May 2003


Page(s)		547 - 553
Section		Condensed matter: structure, mechanical and thermal properties
DOI		https://doi.org/10.1209/epl/i2003-00385-6
Published online		01 May 2003

Europhys. Lett., 62 (4), pp. 547-553 (2003)

Strain-induced surface structures on $\chem{Sb}$ -covered $\chem{Ge(111)}$ : Epitaxial $\chem{Ge}$ films on $\chem{Si(111):Sb}$

A. Antons¹^,2, Y. Cao¹^,3, B. Voigtländer⁴, K. Schroeder¹, R. Berger¹ and S. Blügel¹

¹ Institut für Festkörperforschung, Forschungszentrum Jülich D-52425 Jülich, Germany
² Department of Physics and Astronomy, Rutgers University Piscataway, NJ 08854-8019, USA
³ Department of Physics, Zhejiang University - Hangzhou 310027, PRC
⁴ Institut für Schichten und Grenzflächen, Forschungszentrum Jülich D-52425 Jülich, Germany

Received: 24 October 2002
Accepted: 10 March 2003

Abstract

STM images of surface structures of an $\chem{Sb}$ -covered $\chem{Ge}$ film growing on $\chem{Si(111)}$ : $\chem{Sb}$ are presented, showing the ( $\sqrt{3}\times\sqrt{3}$ ) structure on $\chem{Si(111)}$ : $\chem{Sb}$ , a ( $6\sqrt{3}\times 6\sqrt{3}$ ) structure consisting of hexagons with a size of 40 $\un{\AA}$ with triangular subunits of ( $1\times 1$ ) structure for the three-monolayer $\chem{Ge}$ film, and a ( $2\times 1$ ) $\chem{Sb}$ -structure for the thick relaxed $\chem{Ge}$ film. Using an ab initio total energy and force method, we have investigated the stability of the different structures of $\chem{Ge(111)}$ : $\chem{Sb}$ (1 $\un{ML}$ ) as a function of the lateral lattice constant. We find that the ( $2\times 1$ ) chain-reconstruction of $\chem{Ge(111)}$ : $\chem{Sb}$ has a range of stability between about 5.5% compression and 1% expansion. For larger dilatations the ( $1\times 1$ ) structure becomes stable, for larger compressions the T₄ ( $\sqrt{3}\times\sqrt{3}$ ) structure does. The observed ( $1\times 1$ ) structure on top of the hexagons can be explained by an 8% dilatation of the surface (compared to $\chem{Si}$ bulk) due to the stress exerted by the $\chem{Sb}$ atoms on the $\chem{Ge}$ film and at the rim of the finite hexagons.

PACS: 68.43.Bc – Ab initio calculations of adsorbate structure and reactions / 68.37.Ef – Scanning tunneling microscopy (including chemistry induced with STM) / 81.15.-z – Methods of deposition of films and coatings; film growth and epitaxy

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