| Issue |
Europhys. Lett.
Volume 63, Number 1, July 2003
|
|
|---|---|---|
| Page(s) | 104 - 110 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2003-00484-4 | |
| Published online | 01 June 2003 | |
Origin of temperature dependence in tunneling magnetoresistance
1
Physics Department 0319, University of California San Diego La Jolla, CA 92093-0319, USA
2
Motorola Labs, Physical Sciences Research Laboratories - Tempe, AZ 85284, USA
Received:
4
November
2002
Accepted:
25
April
2003
We present detailed measurements of the differential resistance
(
) of state-of-the-art
x/
magnetic tunnel junctions (MTJ) as
a function of applied bias and temperature. Temperature effects
are particularly significant in physical quantities involving
narrow features such as those at low-voltage bias. We show that
the temperature evolution of the tunneling characteristics and,
in particular, the pronounced rounding of the
curves with increasing temperature can be well explained by
thermal smearing of the tunneling electron energy distribution.
PACS: 73.40.Gk – Tunneling / 73.40.Rw – Metal-insulator-metal structures / 75.70.Pa – Giant magnetoresistance
© EDP Sciences, 2003
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