Volume 63, Number 1, July 2003
|Page(s)||104 - 110|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 June 2003|
Origin of temperature dependence in tunneling magnetoresistance
Physics Department 0319, University of California San Diego La Jolla, CA 92093-0319, USA
2 Motorola Labs, Physical Sciences Research Laboratories - Tempe, AZ 85284, USA
Accepted: 25 April 2003
We present detailed measurements of the differential resistance () of state-of-the-art x/ magnetic tunnel junctions (MTJ) as a function of applied bias and temperature. Temperature effects are particularly significant in physical quantities involving narrow features such as those at low-voltage bias. We show that the temperature evolution of the tunneling characteristics and, in particular, the pronounced rounding of the curves with increasing temperature can be well explained by thermal smearing of the tunneling electron energy distribution.
PACS: 73.40.Gk – Tunneling / 73.40.Rw – Metal-insulator-metal structures / 75.70.Pa – Giant magnetoresistance
© EDP Sciences, 2003
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